SI4906DY-T1-E3 Datasheet, PDF (4/10 Pages) Vishay Siliconix – Dual N-Channel 40-V (D-S) MOSFET

Si4906DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.30
0.24
10
T_J = 150 °C
0.18
25 °C
1
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.4
I_D = 250 µA
0.2
0.12
125 °C
0.06
25 °C
0.00
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
100
80
0.0
I_D = 5 mA
60
- 0.2
40
- 0.4
- 0.6
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
Limited by R_DS(on)*
10
20
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
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4
1 ms
1
10 ms
0.1
0.01
0.1
100 ms
1s
10 s
T_A = 25 °C
DC
Single Pulse
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 73867
S09-2432-Rev. C, 16-Nov-09