SI4906DY-T1-E3 Datasheet, PDF (3/10 Pages) Vishay Siliconix – Dual N-Channel 40-V (D-S) MOSFET

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30
2.0
24
V_GS = 10 V thru 4 V
1.6
Si4906DY
Vishay Siliconix
18
1.2
12
3V
6
0
0.0
0.5
1.0
1.5
2.0
2.5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.060
0.8
T_C = 125 °C
0.4
25 °C
- 55 °C
0.0
0.0
0.8
1.6
2.4
3.2
4.0
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
900
0.052
0.044
V_GS = 4.5 V
720
C_iss
540
0.036
0.028
V_GS = 10 V
0.020
0
4
8
12
16
20
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
I_D = 5 A
8
V_DS = 10 V
V_DS = 30 V
6
V_DS = 20 V
4
2
360
C_oss
180
C_rss
0
0
6
12
18
24
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.8
I_D = 5 A
1.5
1.2
V_GS = 10 V
V_GS = 4.5 V
0.9
0
0
3
6
9
12
15
Q_g - Total Gate Charge (nC)
Gate Charge
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 73867
S09-2432-Rev. C, 16-Nov-09
www.vishay.com
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