SI4890DY Datasheet, PDF (4/4 Pages) Vishay Siliconix – N-Channel Reduced Qg, Fast Switching MOSFET

Si4890DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
50
On-Resistance vs. Gate-to-Source Voltage
0.10
T_J = 150_C
10
0.08
0.06
I_D = 11 A
T_J = 25_C
0.04
0.02
1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
V_SD – Source-to-Drain Voltage (V)
Threshold Voltage
0.6
0.4
0.2
I_D = 250 mA
–0.0
–0.2
–0.4
–0.6
–0.8
–1
–50 –25
0 25 50 75 100 125 150
T_J – Temperature (_C)
0
0
50
40
2
4
6
8
10
V_GS – Gate-to-Source Voltage (V)
Single Pulse Power
30
20
10
0
0.01
0.1
1
Time (sec)
10 30
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10^–4
10^–3
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2-4
10^–2
10^–1
1
Square Wave Pulse Duration (sec)
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 70_C/W
3. T_JM – T_A = P_DMZ_thJA(t)
4. Surface Mounted
10
100
600
Document Number: 70855
S-56948—Rev. A, 01-Feb-99