SI4890DY Datasheet, PDF (3/4 Pages) Vishay Siliconix – N-Channel Reduced Qg, Fast Switching MOSFET

Si4890DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
50
50
V_GS = 10 thru 4 V
40
40
Transfer Characteristics
30
30
20
3V
10
0
0
0.05
2
4
6
8
10
V_DS – Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.04
0.03
0.02
0.01
V_GS = 4.5 V
V_GS = 10 V
0
0
10
20
30
40
50
I_D – Drain Current (A)
Gate Charge
10
V_DS = 15 V
I_D = 11 A
8
6
4
2
0
0
5
10
15
20
25
Q_g – Total Gate Charge (nC)
Document Number: 70855
S-56948—Rev. A, 01-Feb-99
20
T_C = 125_C
10
25_C
–55_C
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
V_GS – Gate-to-Source Voltage (V)
1800
Capacitance
1500
C_iss
1200
900
600
C_oss
300
0
0
C_rss
6
12
18
24
30
V_DS – Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.8
V_GS = 10 V
1.6
I_D = 11 A
1.4
1.2
1.0
0.8
0.6
0.4
–50 –25 0
25 50 75 100 125 150
T_J – Junction Temperature (_C)
www.vishay.com S FaxBack 408-970-5600
2-3