SI4890BDY Datasheet, PDF (4/7 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

Si4890BDY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.10
I_D = 10 A
10
0.08
1
T_J = 150 °C
T_J = 25 °C
0.06
0.1
0.04
0.01
0.02
T_A = 125 °C
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.6
0
T_A = 25 °C
0 1 2 3 4 5 6 7 8 9 10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
120
0.3
96
0
- 0.3
I_D = 5 mA
72
48
- 0.6
I_D = 250 mA
- 0.9
24
- 1.2
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
100
Limited by R_DS(on)*
10
1 ms
1
10 ms
100 ms
0.1
T_A = 25 °C
Single Pulse
0.01
0.1
1
1s
10 s
DC
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 69502
S09-0540-Rev. B, 06-Apr-09