SI4890BDY Datasheet, PDF (3/7 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

New Product
Si4890BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
50
2.0
V_GS = 10 V thru 5 V _{4 V}
40
1.5
30
1.0
20
T_C = 25 °C
10
0
0
0.016
3V
0.5
1.0
1.5
2.0
2.5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.5
0
0
2000
T_C = 125 °C
T_J = - 55 °C
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.014
0.012
V_GS = 4.5 V
C_iss
1600
1200
0.010
0.008
V_GS = 10 V
0.006
0
10
20
30
40
50
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
I_D = 10 A
8
V_DS = 10 V
V_DS = 15 V
6
V_DS = 20 V
4
2
800
C_oss
400
C_rss
0
0
6
12
18
24
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.8
I_D = 10 A
1.5
V_GS = 10 V
1.2
V_GS = 4.5 V
0.9
0
0
5
10
15
20
25
Q_g - Total Gate Charge (nC)
Gate Charge
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 69502
S09-0540-Rev. B, 06-Apr-09
www.vishay.com
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