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SI4882DY Datasheet, PDF (4/4 Pages) Vishay Siliconix – N-Channel Reduced Qg, Fast Switching MOSFET | |||
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Si4882DY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.6
60
0.4
50
0.2
ID = 250 mA
40
â0.0
â0.2
30
â0.4
20
â0.6
10
â0.8
â1.0
â50 â25
0 25 50 75 100 125 150
TJ â Temperature (_C)
0
0.01
Single Pulse Power
0.1
1
Time (sec)
10 30
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
10â4
Single Pulse
10â3
2
1
Duty Cycle = 0.5
10â2
10â1
1
Square Wave Pulse Duration (sec)
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 68_C/W
3. TJM â TA = PDMZthJA(t)
4. Surface Mounted
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Foot
0.2
0.1
0.1 0.05
0.02
0.01
10â4
Single Pulse
10â3
www.vishay.com S FaxBack 408-970-5600
2-4
10â2
10â1
Square Wave Pulse Duration (sec)
1
10
Document Number: 70878
S-00271âRev. A, 26-Apr-99
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