SI4882DY Datasheet, PDF (3/4 Pages) Vishay Siliconix – N-Channel Reduced Qg, Fast Switching MOSFET

New Product
Si4882DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.030
On-Resistance vs. Drain Current
2000
Capacitance
0.025
0.020
V_GS = 4.5 V
0.015
0.010
V_GS = 10 V
0.005
0
0
10
20
30
40
50
I_D – Drain Current (A)
Gate Charge
10
V_DS = 15 V
I_D = 11 A
8
6
4
2
0
0
6
12
18
24
30
Q_g – Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
50
1600
C_iss
1200
800
C_oss
400
C_rss
0
0
6
12
18
24
30
V_DS – Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.8
V_GS = 10 V
1.6
I_D = 11 A
1.4
1.2
1.0
0.8
0.6
0.4
–50 –25 0
25 50 75 100 125 150
T_J – Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.10
T_J = 150_C
10
0.08
0.06
I_D = 11 A
T_J = 25_C
0.04
0.02
1
0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD – Source-to-Drain Voltage (V)
Document Number: 70878
S-00271—Rev. A, 26-Apr-99
0
0
2
4
6
8
10
V_GS – Gate-to-Source Voltage (V)
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