SI4874BDY Datasheet, PDF (4/5 Pages) Vishay Siliconix – N-Channel 30-V MOSFET

Si4874BDY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.4
200
Single Pulse Power
0.2
I_D = 250 mA
160
−0.0
120
−0.2
−0.4
80
−0.6
40
−0.8
−1.0
−50 −25
0 25 50 75 100 125 150
T_J − Temperature (_C)
0
0.001
0.01
0.1
1
10
Time (sec)
100
Limited by
r_DS(on)
10
Safe Operating Area
1 ms
10 ms
1
100 ms
1s
0.1
T_C = 25_C
Single Pulse
10 s
dc
0.01
0.1
1
10
100
V_DS − Drain-to-Source Voltage (V)
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
10^−4
Single Pulse
10^−3
10^−2
10^−1
1
Square Wave Pulse Duration (sec)
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 67_C/W
3. T_JM − T_A = P_DMZ_thJA(t)
4. Surface Mounted
10
100
600
www.vishay.com
4
Document Number: 73058
S-41508—Rev. A, 09-Aug-04