SI4874BDY Datasheet, PDF (3/5 Pages) Vishay Siliconix – N-Channel 30-V MOSFET

New Product
Si4874BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.010
On-Resistance vs. Drain Current
4000
Capacitance
0.008
0.006
0.004
0.002
V_GS = 4.5 V
V_GS = 10 V
3500
C_iss
3000
2500
2000
1500
1000
C_oss
500
C_rss
0.000
0
10
20
30
40
50
0
0
5
10
15
20
25
30
I_D − Drain Current (A)
V_DS − Drain-to-Source Voltage (V)
Gate Charge
6
5
V_DS = 15 V
I_D = 16 A
4
3
2
1
On-Resistance vs. Junction Temperature
1.6
V_GS = 10 V
1.4
I_D = 16 A
1.2
1.0
0.8
0
0
6
12
18
24
30
Q_g − Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
50
0.6
−50 −25 0
25 50 75 100 125 150
T_J − Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.020
T_J = 150_C
10
0.016
0.012
I_D = 16 A
T_J = 25_C
0.008
0.004
1
0.00
0.2
0.4
0.6
0.8
1.0
1.2
V_SD − Source-to-Drain Voltage (V)
Document Number: 73058
S-41508—Rev. A, 09-Aug-04
0.000
0
2
4
6
8
10
V_GS − Gate-to-Source Voltage (V)
www.vishay.com
3