SI4866DY Datasheet, PDF (4/4 Pages) Vishay Siliconix – N-Channel Reduced Qg, Fast Switching MOSFET

Si4866DY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.4
200
I_D = 250 mA
0.2
160
Single Pulse Power
- 0.0
120
- 0.2
80
- 0.4
40
- 0.6
-50 -25
0 25 50 75 100 125 150
T_J - Temperature (_C)
0
0.001
0.01
0.1
1
10
Time (sec)
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
10 ^{- 4}
Single Pulse
10 ^{- 3}
2
1 Duty Cycle = 0.5
10 ^{- 2}
10 ^{- 1}
1
Square Wave Pulse Duration (sec)
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 67_C/W
3. T_JM - T_A = P_DMZ_thJA(t)
4. Surface Mounted
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Foot
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 ^{- 4}
10 ^{- 3}
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4
10 ^{- 2}
10 ^{- 1}
Square Wave Pulse Duration (sec)
1
10
Document Number: 71699
S-03662—Rev. B, 14-Apr-03