SI4866DY Datasheet, PDF (3/4 Pages) Vishay Siliconix – N-Channel Reduced Qg, Fast Switching MOSFET

New Product
Si4866DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.015
On-Resistance vs. Drain Current
4000
Capacitance
0.012
0.009
0.006
0.003
V_GS = 2.5 V
V_GS = 4.5 V
3200
C_iss
2400
1600
C_oss
800
C_rss
0.000
0
10
20
30
40
50
I_D - Drain Current (A)
Gate Charge
6
5
V_DS = 6 V
I_D = 17 A
4
3
2
1
0
0
5
10
15
20
25
30
Q_g - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
50
0
0
2
4
6
8
10
12
V_DS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
V_GS = 4.5 V
1.4
I_D = 17 A
1.2
1.0
0.8
0.6
-50 -25 0
25 50 75 100 125 150
T_J - Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.040
T_J = 150_C
10
0.032
0.024
T_J = 25_C
0.016
0.008
I_D = 17 A
1
0.00
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Document Number: 71699
S-03662—Rev. B, 14-Apr-03
0.000
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
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