SI4837DY Datasheet, PDF (4/6 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET with Schottky Diode

Si4837DY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
50
0.070
MOSFET
On-Resistance vs. Gate-to-Source Voltage
T_J = 150_C
10
T_J = 25_C
0.056
0.042
0.028
0.014
I_D = 8.3 A
1
0.00 0.25 0.50 0.75 1.00 1.25 1.50
V_SD – Source-to-Drain Voltage (V)
Threshold Voltage
0.8
0.000
0
2
4
6
8
10
V_GS – Gate-to-Source Voltage (V)
Single Pulse Power, Junction-to-Ambient
200
0.6
160
I_D = 250 mA
0.4
120
0.2
80
0.0
40
–0.2
–0.4
–50 –25
0 25 50 75 100 125 150
T_J – Temperature (_C)
0
0.001
0.01
0.1
1
10
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10^–4
10^–3
10^–2
10^–1
1
Square Wave Pulse Duration (sec)
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 70_C/W
3. T_JM – T_A = P_DMZ_thJA(t)
4. Surface Mounted
10
100
600
www.vishay.com
4
Document Number: 71662
S-04246—Rev. A, 16-Jul-01