SI4837DY Datasheet, PDF (1/6 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET with Schottky Diode

New Product
Si4837DY
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET with Schottky Diode
MOSFET PRODUCT SUMMARY
V_DS (V)
–30
r_DS(on) (W)
0.020 @ V_GS = –10 V
0.030 @ V_GS = –4.5 V
I_D (A)
8.3
6.8
SCHOTTKY PRODUCT SUMMARY
V_KA (V)
30
V_f (V)
Diode Forward Voltage
0.53 V @ 3 A
I_F (A)
3
K1
S2
S3
G4
SO-8
Top View
8A
7D
6D
5D
FEATURES
D TrenchFETr Power MOSFET
D LITTLE FOOT Plust Schottky
APPLICATIONS
D Battery Charging
D DC/DC Converters
– Asynchronous Buck
– Voltage Inverter
S
K
G
D
A
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 Sec
Steady State
Drain-Source Voltage (MOSFET)
Reverse Voltage (Schottky)
Gate-Source Voltage (MOSFET)
V_DS
–30
V_KA
30
V_GS
"20
Continuous Drain Current (T_J = 150_C) (MOSFET)^{a, b}
Pulsed Drain Current (MOSFET)
T_A = 25_C
T_A = 70_C
Continuous Source Current (MOSFET Diode Conduction)^{a, b}
Average Foward Current (Schottky)
Pulsed Foward Current (Schottky)
Maximum Power Dissipation (MOSFET)^{a, b}
Maximum Power Dissipation (Schottky)^{a, b}
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
I_D
I_DM
I_S
I_F
I_FM
P_D
T_J, T_stg
–8.3
–6.1
–6.6
–4.9
–40
–2.3
–1.25
3
20
2.5
1.38
1.6
0.88
1.5
1.0
0.98
0.64
–55 to 150
Notes
a. Surface Mounted on FR4 Board.
b. t v 10 sec.
Unit
V
A
W
_C
Document Number: 71662
S-04246—Rev. A, 16-Jul-01
www.vishay.com
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