SI4833DY_07 Datasheet, PDF (4/7 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET with Schottky Diode

Si4833DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
MOSFET
Source-Drain Diode Forward Voltage
20
On-Resistance vs. Gate-to-Source Voltage
0.5
0.4
10
0.3
T_J = 150_C
0.2
T_J = 25_C
0.1
I_D = 2.5 A
1
0
0.8
0.6
0.2 0.4 0.6 0.8 1.0 1.2 1.4
V_SD – Source-to-Drain Voltage (V)
Threshold Voltage
I_D = 250 mA
0.4
0.2
0.0
–0.2
–0.4
–50 –25
0 25 50 75 100 125 150
T_J – Temperature (_C)
0
0
2
4
6
8
10
V_GS – Gate-to-Source Voltage (V)
Single Pulse Power
35
28
21
14
7
0
0.01
0.1
1
Time (sec)
10
30
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
10^–4
Single Pulse
10^–3
10^–2
10^–1
1
Square Wave Pulse Duration (sec)
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 90_C/W
3. T_JM – T_A = P_DMZ_thJA(t)
4. Surface Mounted
10
100
600
www.vishay.com S FaxBack 408-970-5600
2-4
Document Number: 70796
S-56941—Rev. B, 02-Nov-98