SI4833DY_07 Datasheet, PDF (3/7 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET with Schottky Diode

Si4833DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
20
20
V_GS = 10, 9, 8, 7, 6 V
16
16
5V
12
12
Transfer Characteristics
MOSFET
T_C = –55_C
25_C
125_C
8
4V
4
3V
0
0
2
4
6
8
V_DS – Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.40
0.32
0.24
0.16
0.08
V_GS = 4.5 V
V_GS = 10 V
0
0
3
6
9
12
15
I_D – Drain Current (A)
10
Gate Charge
V_DS = 10 V
8
I_D = 2.5 A
6
4
2
0
0
2
4
6
8
10
Q_g – Total Gate Charge (nC)
Document Number: 70796
S-56941—Rev. B, 02-Nov-98
8
4
0
0
2
4
6
8
V_GS – Gate-to-Source Voltage (V)
Capacitance
700
600
C_iss
500
400
300
C_oss
200
100
C_rss
0
0
6
12
18
24
30
V_DS – Drain-to-Source Voltage (V)
2.0 ^{On-Resistance vs. Junction Temperature}
1.8
V_GS = 10 V
I_D = 2.5 A
1.6
1.4
1.2
1.0
0.8
0.6
0.4
–50 –25 0
25 50 75 100 125 150
T_J – Junction Temperature (_C)
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