SI4825DY_13 Datasheet, PDF (4/8 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET

Si4825DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1.0
50
0.8
40
0.6
I_D = 250 µA
30
0.4
0.2
20
0.0
10
- 0.2
- 0.4
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
2
1
Duty Cycle = 0.5
0
10-²
10-¹
1
10
100 600
Time (s)
Single Pulse Power, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
10- ⁴
2
Notes:
P_DM
Single Pulse
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R _thJA = 68 °C/W
3. T _JM - T_A = P_DMZ_thJA(t)
4. Surface Mounted
10- ³
10- ²
10- ¹
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 ^-4
10 ^-3
10 ^-2
10 ^-1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71291.
www.vishay.com
4
Document Number: 71291
S09-0868-Rev. D, 18-May-09