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SI4825DY_13 Datasheet, PDF (2/8 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET
Si4825DY
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 µA
- 1.0
- 3.0
V
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 25 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = - 30 V, VGS = 0 V
VDS = - 30 V, VGS = 0 V, TJ = 55 °C
-1
µA
-5
On-State Drain Currenta
ID(on)
VDS ≤ - 5 V, VGS = - 10 V
- 50
A
Drain-Source On-State Resistancea
RDS(on)
VGS = - 10 V, ID = - 11.5 A
VGS = - 4.5 V, ID = - 9.2 A
0.012 0.014
Ω
0.018 0.022
Forward Transconductancea
gfs
VDS = - 15 V, ID = - 11.5 A
28
S
Diode Forward Voltagea
VSD
IS = - 2.5 A, VGS = 0 V
- 0.8
- 1.2
V
Dynamicb
Total Gate Charge
Qg
55
71
Gate-Source Charge
Qgs
VDS = - 15 V, VGS = - 10 V, ID = - 11.5 A
15.5
nC
Gate-Drain Charge
Qgd
7.5
Gate Resistance
Rg
f = 1 MHz
3.5
5.3
Ω
Turn-On Delay Time
td(on)
15
25
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = - 15 V, RL = 15 Ω
ID ≅ - 1 A, VGEN = - 10 V, Rg = 6 Ω
13
20
97
150
ns
Fall Time
tf
51
75
Source-Drain Reverse Recovery Time
trr
IF = - 2.5 A, dI/dt = 100 A/µs
45
80
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
50
50
VGS = 10 V thru 5 V
4V
40
40
30
30
20
3V
10
0
0
1
2
3
4
5
VDS - Drain-to-Source Voltage (V)
Output Characteristics
20
TC = 125 °C
10
25 °C
- 55 °C
0
0
1
2
3
4
5
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
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Document Number: 71291
S09-0868-Rev. D, 18-May-09