SI4810DY Datasheet, PDF (4/5 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET with Schottky Diode

Si4810DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
50
0.10
On-Resistance vs. Gate-to-Source Voltage
10
T_J = 150_C
1
T_J = 25_C
0.08
0.06
I_D = 9.0 A
0.04
0.02
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Reverse Current (Schottky)
30
10
0.00
0
80
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
Single Pulse Power
1
60
30 V
0.1
40
10 V
0.01
20 V
20
0.001
0.0001
0
25
50
75
100 125 150
T_J - Temperature (_C)
0
0.01
0.10
1.00
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
10.00
0.2
0.1
0.1
0.05
0.02
0.01
10 ^{- 4}
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2-4
Single Pulse
10 ^{- 3}
10 ^{- 2}
10 ^{- 1}
Square Wave Pulse Duration (sec)
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 70_C/W
3. T_JM - T_A = P_DMZ_thJA(t)
4. Surface Mounted
1
10
30
Document Number: 70802
S-31062—Rev. F, 26-May-03