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| SI4810DY Datasheet, PDF (2/5 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET with Schottky Diode | |||
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Si4810DY
Vishay Siliconix
MOSFET + SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min Typ Max
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
(MOSFET + Schottky)
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Schottky Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "20 V
VDS = 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 100_C
VDS = 30 V, VGS = 0 V, TJ = 125_C
VDS w 5 V, VGS = 10 V
VGS = 10 V, ID = 10 A
VGS = 4.5 V, ID = 5 A
VDS = 15 V, ID = 10 A
IS = 3.0 A, VGS = 0 V
IS = 3.0 A, VGS = 0 V, TJ = 125_C
1
"100
0.007
0.100
1.5
10
6.5
20
20
0.0105 0.0135
0.0155
0.020
28
0.485
0.53
0.420
0.47
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
trr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
VDS = 15 V, VGS = 5 V, ID = 10 A
VDD = 15 V, RL = 15 W
ID ^ 1 A, VGEN = 10 V, RG = 6 W
IF = 3.0 A, di/dt = 100 A/ms
20
30
8
7
0.5
1.0
1.6
15
30
8
15
45
90
18
40
36
70
Unit
V
nA
mA
A
W
S
V
nC
W
ns
www.vishay.com
2-2
Document Number: 70802
S-31062âRev. F, 26-May-03
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