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SI4804DY Datasheet, PDF (4/4 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET
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Si4804DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.4
50
Single Pulse Power
0.2
40
ID = 250 mA
−0.0
30
−0.2
20
−0.4
−0.6
10
−0.8
−50 −25
0 25 50 75 100 125 150
TJ − Temperature (_C)
0
10−3
10−2
10−1
1
10
Time (sec)
100 600
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
10−4
Single Pulse
10−3
2
1
Duty Cycle = 0.5
10−2
10−1
1
Square Wave Pulse Duration (sec)
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 93_C/W
3. TJM − TA = PDMZthJA(t)
4. Surface Mounted
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Foot
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10−4
10−3
10−2
10−1
1
10
Square Wave Pulse Duration (sec)
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4
Document Number: 71088
S-31989—Rev. D, 13-Oct-03