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SI4804DY Datasheet, PDF (3/4 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET
Si4804DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.040
On-Resistance vs. Drain Current
1000
Capacitance
0.032
0.024
0.016
0.008
VGS = 4.5 V
VGS = 10 V
800
Ciss
600
400
Coss
200
Crss
0.000
0
4
8
12
16
20
ID − Drain Current (A)
Gate Charge
10
VDS = 15 V
ID = 7.5 A
8
0
0
6
12
18
24
30
VDS − Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
VGS = 10 V
ID = 7.5 A
1.4
6
1.2
4
1.0
2
0.8
0
0
3
6
9
12
15
Qg − Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
20
TJ = 150_C
10
0.6
−50 −25 0
25 50 75 100 125 150
TJ − Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.04
ID = 7.5 A
0.03
TJ = 25_C
0.02
0.01
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD − Source-to-Drain Voltage (V)
Document Number: 71088
S-31989—Rev. D, 13-Oct-03
0.00
0
2
4
6
8
10
VGS − Gate-to-Source Voltage (V)
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