SI4800BDY-T1-E3 Datasheet, PDF (4/9 Pages) Vishay Siliconix – N-Channel Reduced Qg, Fast Switching MOSFET

Si4800BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.06
50
0.05
T_J = 150 °C
10
0.04
I_D = 9 A
0.03
0.02
T_J = 25 °C
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.4
0.2
I_D = 250 µA
0.0
- 0.2
- 0.4
- 0.6
0.01
0.00
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
150
120
90
60
30
- 0.8
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
Limited
by R_DS(on)*
0
10^-3
10^-2
10^-1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
10
1 ms
1
0.1
T_C = 25 °C
Single Pulse
10 ms
100 ms
1s
10 s
DC
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
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4
Document Number: 72124
S-83039-Rev. H, 29-Dec-08