SI4800BDY-T1-E3 Datasheet, PDF (1/9 Pages) Vishay Siliconix – N-Channel Reduced Qg, Fast Switching MOSFET

Si4800BDY
Vishay Siliconix
N-Channel Reduced Q_g, Fast Switching MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
30
0.0185 at V_GS = 10 V
0.030 at V_GS = 4.5 V
I_D (A)
9
7
FEATURES
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET^® Power MOSFET
• High-Efficient PWM Optimized
• 100 % UIS and R_g Tested
S1
S2
S3
G4
SO-8
Top View
8D
7D
6D
5D
Ordering Information: Si4800BDY-T1-E3 (Lead (Pb)-free)
Si4800BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
30
V
V_GS
± 25
Continuous Drain Current (T_J = 150 °C)^{a, b}
T_A = 25 °C
T_A = 70 °C
I_D
9
6.5
7.0
5.0
Pulsed Drain Current (10 µs Pulse Width)
I_DM
40
A
Continuous Source Current (Diode Conduction)^{a, b}
I_S
2.3
Avalanche Current
Single-Pulse Avalanche Energy
I_AS
15
L = 0.1 mH
E_AS
11.25
mJ
Maximum Power Dissipation^{a, b}
T_A = 25 °C
T_A = 70 °C
P_D
2.5
1.3
1.6
0.8
W
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on FR4 board.
b. t ≤ 10 s.
t ≤ 10 s
Steady State
Steady State
Symbol
R_thJA
R_thJF
Typ.
40
70
24
Limits
Max.
50
95
30
Unit
°C/W
Document Number: 72124
S-83039-Rev. H, 29-Dec-08
www.vishay.com
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