SI4776DY Datasheet, PDF (4/7 Pages) Vishay Siliconix – N-Channel 30 V (D-S) MOSFET with Schottky Diode

New Product
Si4776DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
10
T_J = 150 °C
1
T_J = 25 °C
0.1
0.01
0.050
I_D = 10 A
0.040
0.030
0.020
0.010
T_J = 125 °C
T_J = 25 °C
0.001
0.0
0.2
0.4
0.6
0.8
1.0
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.000
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
10^-1
10^-2
10^-3
10^-4
10^-5
10^-6
10^-7
0
150
30 V
120
20 V
90
60
10 V
30
25
50
75
100 125 150
T_J - Temperature (°C)
Reverse Current (Schottky)
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
100
I_DM Limited
10 ID Limited
100 μs
1 ms
1
Limited by R_DS(on)*
10 ms
100 ms
0.1
1s
T_C = 25 °C
Single Pulse
0.01
0.01
0.1
10 s
BVDSS Limited
DC
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area
www.vishay.com
Document Number: 63316
4
S11-1658-Rev. A, 15-Aug-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000