SI4776DY Datasheet, PDF (1/7 Pages) Vishay Siliconix – N-Channel 30 V (D-S) MOSFET with Schottky Diode

New Product
Si4776DY
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
V_DS (V)
R_DS(on) () Max.
0.016 at V_GS = 10 V
30
0.020 at V_GS = 4.5 V
I_D (A)^a
11.9
10.6
Q_g (Typ.)
5.5 nC
S1
S2
S3
G4
SO-8
8^D
7D
6D
5D
Top View
Ordering Information:
Si4776DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• SkyFET^Monolithic TrenchFET^Power
MOSFET and Schottky Diode
• 100 % R_g and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Notebook System Power and Memory
- Low Side
D
G
N-Channel MOSFET
S
Schottky Diode
ABSOLUTE MAXIMUM RATINGS (T_A = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
T_C = 25 °C
Continuous Drain Current (T_J = 150 °C)
T_C = 70 °C
T_A = 25 °C
I_D
T_A = 70 °C
Pulsed Drain Current (t = 300 µs)
I_DM
Continuous Source-Drain Diode Current
T_C = 25 °C
T_A = 25 °C
I_S
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
I_AS
E_AS
T_C = 25 °C
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
P_D
T_A = 70 °C
Operating Junction and Storage Temperature Range
T_J, T_stg
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, d}
t  10 s
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Based on T_C = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 95 °C/W.
Symbol
R_thJA
R_thJF
Typ.
40
24
Limit
30
± 20
11.9
9.5
9.3^{b, c}
7.5^{b, c}
50
3.7
2.3^{b, c}
10
5
4.1
2.6
2.5^{b, c}
1.6^{b, c}
- 55 to 150
Max.
50
30
Unit
V
A
mJ
W
°C
Unit
°C/W
Document Number: 63316
www.vishay.com
S11-1658-Rev. A, 15-Aug-11
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000