SI4668DY Datasheet, PDF (4/7 Pages) Vishay Siliconix – N-Channel 25-V (D-S) MOSFET

Si4668DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.05
10
0.04
1
T_J = 150 °C
0.1
T_J = 25 °C
0.01
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.5
0.2
- 0.1
- 0.4
- 0.7
I_D = 5 mA
I_D = 250 µA
- 1.0
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100 _{Limited by RDS(on)*}
0.03
0.02
T_A = 125 °C
0.01
T_A = 25 °C
0
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
120
96
72
48
24
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
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4
10
1 ms
1
10 ms
100 ms
1s
0.1
10 s
DC
T_A = 25 °C
Single Pulse
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 69513
S09-0394-Rev. B, 09-Mar-09