SI4668DY Datasheet, PDF (3/7 Pages) Vishay Siliconix – N-Channel 25-V (D-S) MOSFET

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
60
2.0
V_GS = 10 V thru 4 V
48
1.6
Si4668DY
Vishay Siliconix
36
24
12
0
0
0.013
0.012
V_GS = 3 V
0.5
1.0
1.5
2.0
2.5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
1.2
0.8
T_J = 25 °C
0.4
T_J = 125 °C
T_J = - 55 °C
0
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
2100
C_iss
1680
0.011
0.010
V_GS = 4.5 V
1260
840
0.009
V_GS = 10 V
0.008
0
12
24
36
48
60
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
I_D = 10 A
8
6
V_DS = 10 V
V_DS = 15 V
4
V_DS = 20 V
2
0
0
5.6
11.2
16.8
22.4
28.0
Q_g - Total Gate Charge (nC)
Gate Charge
420
C_oss
0 ^Crss
0
5
10
15
20
25
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.8
I_D = 20 A
1.6
1.4
1.2
1.0 ^VGS ^{= 10 V}
0.8
V_GS = 4.5 V
0.6
- 50 - 25 0 25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 69513
S09-0394-Rev. B, 09-Mar-09
www.vishay.com
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