SI4636DY Datasheet, PDF (4/7 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET with Schottky Diode

Si4636DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
10 _{150 °C}
0.050
0.040
I_D = 10 A
0.030
1
25 °C
0.1
0.020
0.010
125 °C
0.01
0.0
0.2
0.4
0.6
0.8
1.0
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
25 °C
0.000
0 1 2 3 4 5 6 7 8 9 10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
1
200
0.1
160
30 V
0.01
20 V
120
0.001
80
0.0001
40
0.00001
0
25
50
75
100 125 150
T_J - Temperature (°C)
Reverse Current (Schottky)
0
0.001
0.01
0.1
1
10
Time (s)
Junction-to-Ambient
100
Limited by R_DS(on)*
10
1 ms
1
0.1
T_C = 25 °C
Single Pulse
10 ms
100 ms
1s
10 s
DC
0.01
0.1
* V_GS
1
10
100
V_DS - Drain-to-Source Voltage (V)
minimum V_GS at which R_DS(on) is specified
Safe Operating Area
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Document Number: 74961
S09-0394-Rev. C, 09-Mar-09