SI4636DY Datasheet, PDF (1/7 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET with Schottky Diode

Si4636DY
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
30
0.0085 at V_GS = 10 V
0.0105 at V_GS = 4.5 V
I_D (A)^a
17
15.6
Q_g (Typ.)
18.8 nC
SCHOTTKY AND BODY DIODE PRODUCT
SUMMARY
V_DS (V)
30
V_SD (V)
0.4 at 2 A
I_S (A)
5^a
FEATURES
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET^® Power MOSFET
• 100 % R_g and UIS Tested
APPLICATIONS
• Notebook Logic DC/DC
- Low Side
SO-8
S1
S2
S3
G4
8^D
7D
6D
5D
Top View
Ordering Information: Si4636DY-T1-E3 (Lead (Pb)-free)
Si4636DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
G
N-Channel MOSFET
S
Schottky Diode
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
30
V
V_GS
± 16
T_C = 25 °C
17.0
Continuous Drain Current (T_J = 150 °C)
T_C = 70 °C
T_A = 25 °C
I_D
13.5
12.7^{b, c}
Pulsed Drain Current
T_A = 70 °C
10.2^{b, c}
A
I_DM
60
Continuous Source-Drain Diode Current
T_C = 25 °C
T_A = 25 °C
I_S
5.0
2.3^{b, c}
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
I_AS
E_AS
20
20
mJ
T_C = 25 °C
4.4
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
P_D
2.8
W
2.5^{b, c}
T_A = 70 °C
1.6^{b, c}
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typ.
Maximum Junction-to-Ambient^{b, d}
Maximum Junction-to-Foot (Drain)
t ≤ 10 s
R_thJA
40
Steady State
R_thJF
23
Notes:
a. Based on T_C = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 90 °C/W.
Max.
50
28
Unit
°C/W
Document Number: 74961
S09-0394-Rev. C, 09-Mar-09
www.vishay.com
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