SI4626ADY Datasheet, PDF (4/9 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

Si4626ADY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.030
10
150 °C
1
0.024
0.018
I_D = 15 A
25 °C
0.1
0.01
0.001
0
0.2
0.4
0.6
0.8
1.0 1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.6
0.012
0.006
125 °C
0.000
25 °C
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
200
0.3
0
- 0.3
- 0.6
- 0.9
160
120
I_D = 5 mA
80
I_D = 250 µA
40
- 1.2
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
Limited by R_DS(on)*
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power
10
1 ms
10 ms
1
100 ms
0.1
0.01
0.01
T_C = 25 °C
Single Pulse
0.1
1
1s
10 s
DC
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 69937
S09-0131-Rev. B, 02-Feb-09