SI4626ADY Datasheet, PDF (1/9 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

New Product
N-Channel 30-V (D-S) MOSFET
Si4626ADY
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
0.0033 at V_GS = 10 V
30
0.0041 at V_GS = 4.5 V
I_D (A)^a
30
26.3
Q_g (Typ.)
37 nC
S1
S2
S3
G4
SO-8
8D
7D
6D
5D
Top View
Ordering Information: Si4626ADY-T1-E3 (Lead (Pb)-free)
Si4626ADY-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET^® Power MOSFET
• 100 % R_g and UIS Tested
APPLICATIONS
• Low-Side DC/DC Conversion
- Notebook
- Gaming
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
30
V
V_GS
± 20
T_C = 25 °C
30
Continuous Drain Current (T_J = 150 °C)
T_C = 70 °C
T_A = 25 °C
I_D
22.6
21.5^{b, c}
Pulsed Drain Current
T_A = 70 °C
17.1^{b, c}
A
I_DM
70
Continuous Source-Drain Diode Current
T_C = 25 °C
T_A = 25 °C
I_S
5.4
2.7^{b, c}
Single Pulse Avalanche Current
L = 0.1 mH
I_AS
40
Avalanche Energy
E_AS
80
mJ
T_C = 25 °C
6.0
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
P_D
3.3
3.0^{b, c}
W
T_A = 70 °C
1.9^{b, c}
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, d}
Maximum Junction-to-Foot (Drain)
t ≤ 10 s
Steady State
Notes:
a. Based on T_C = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 85 °C/W.
Document Number: 69937
S09-0131-Rev. B, 02-Feb-09
Symbol
R_thJA
R_thJF
Typical
33
16
Maximum
42
21
Unit
°C/W
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