SI4480DY Datasheet, PDF (4/5 Pages) Fairchild Semiconductor – 80V N-Channel PowerTrench MOSFET

Si4480DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
40
0.06
10
T_J = 150 °C
T_J = 25 °C
0.05
0.04
I_D = 6.0 A
0.03
0.02
1
0
0.2 0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.0
0.01
0.00
4
5
6
7
8
9
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
50
0.5
40
0.0
I_D = 250 µA
30
- 0.5
20
- 1.0
10
- 1.5
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
2
1
Duty Cycle = 0.5
0
0.01
0.10
1.00
10.00
Time (s)
Single Pulse Power
0.2
0.1
0.1
0.05
0.02
0.01
10 ^{- 4}
Notes:
P_DM
10 ^{- 3}
Single Pulse
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R _thJA = 50 °C/W
3. T _JM - T_A = P_DMZ_thJA(t)
4. Surface Mounted
10 ^{- 2}
10 ^{- 1}
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
30
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reliability data, see www.vishay.com/ppg?70645.
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4
Document Number: 70645
S09-0705-Rev. E, 27-Apr-09