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SI4480DY Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – 80V N-Channel PowerTrench MOSFET
N-Channel 80-V (D-S) MOSFET
Si4480DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
80
0.035 at VGS = 10 V
0.040 at VGS = 6.0 V
ID (A)
6.0
5.5
FEATURES
• Halogen-free According to IEC 61249-2-21
Definiton
• Compliant to RoHS Directive 2002/95/EC
S1
S2
S3
G4
SO-8
8D
7D
6D
5D
Top View
Ordering Information: Si4480DY-T1-E3 (Lead (Pb)-free)
Si4480DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
80
V
VGS
± 20
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 70 °C
ID
6.0
4.8
A
Pulsed Drain Current
IDM
40
Continuous Source Current (Diode Conduction)a
IS
2.1
Maximum Power Dissipationa
TA = 25 °C
TA = 70 °C
PD
2.5
1.6
W
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Notes:
a. Surface Mounted on FR4 board, t ≤ 10 s.
Symbol
RthJA
Limit
50
Unit
°C/W
Document Number: 70645
S09-0705-Rev. E, 27-Apr-09
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