SI4438DY Datasheet, PDF (4/7 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

Si4438DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100.000
0.30
10.000
0.24
T_J = 150 °C
1.000
0.18
I_D = 20 A
0.100
0.010
T_J = 25 °C
0.001
0.00
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.5
0.2
0.12
0.06
T_J = 125 °C
T_J = 25 °C
0.00
0 1 2 3 4 5 6 7 8 9 10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
200
160
- 0.1
- 0.4
- 0.7
120
I_D = 5 mA
80
I_D = 250 µA
40
- 1.0
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
Limited by R_DS(on)*
10
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
1 ms
10 ms
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4
1
100 ms
1s
0.1
10 s
T_A = 25 °C
DC
Single Pulse
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 73581
S09-0228-Rev. B, 09-Feb-09