SI4438DY Datasheet, PDF (3/7 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
60
1.2
V_GS = 10 V thru 4 V
50
1.0
40
0.8
30
0.6
20
0.4
10
3V
0
0.0
0.5
1.0
1.5
2.0
2.5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.2
0.0
0
0.004
6200
Si4438DY
Vishay Siliconix
25 °C
T_C = 125 °C
- 55 °C
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
V_GS = 4.5 V
0.003
V_GS = 10 V
0.002
0
10
20
30
40
50
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
I_D = 20 A
8
6
V_DS = 15 V
4
4960
C_iss
3720
2480
1240
C_oss
C_rss
0
0
6
12
18
24
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.6
I_D = 20 A
1.4
1.2
1.0
V_GS = 10 V
V_GS = 4.5 V
2
0.8
0
0
17
34
51
68
85
Q_g - Total Gate Charge (nC)
Gate Charge
Document Number: 73581
S09-0228-Rev. B, 09-Feb-09
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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3