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SI4435BDY_1 Datasheet, PDF (4/6 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET
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Si4435BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.6
30
0.4
ID = 250 mA
24
0.2
18
0.0
12
Single Pulse Power
−0.2
6
−0.4
−50 −25
0 25 50 75 100 125 150
TJ − Temperature (_C)
0
10−2
10−1
1
10
Time (sec)
Safe Operating Area, Junction-to-Ambient
100
IDM Limited
*rDS(on) Limited
P(t) = 0.0001
10
P(t) = 0.001
1
ID(on)
Limited
0.1
TA = 25_C
Single Pulse
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
dc
0.01
BVDSS Limited
0.1
1
10
100
VDS − Drain-to-Source Voltage (V)
100 600
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
10−4
Single Pulse
10−3
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4
10−2
10−1
1
Square Wave Pulse Duration (sec)
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 70_C/W
3. TJM − TA = PDMZthJA(t)
4. Surface Mounted
10
100
600
Document Number: 72123
S-50694—Rev. C, 18-Apr-05
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