SI4435BDY_1 Datasheet, PDF (3/6 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET

Si4435BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.040
On-Resistance vs. Drain Current
2400
Capacitance
0.035
0.030
0.025
V_GS = 4.5 V
1800
C_iss
0.020
0.015
V_GS = 10 V
1200
0.010
0.005
0.000
0
10
20
30
40
50
600
C_rss
0
0
5
C_oss
10
15
20
25
30
I_D − Drain Current (A)
Gate Charge
10
V_DS = 15 V
I_D = 9.1 A
8
V_DS − Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
V_GS = 10 V
I_D = 9.1 A
1.4
6
1.2
4
1.0
2
0.8
0
0
10
20
30
40
Q_g − Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
50
T_J = 150_C
10
T_J = 25_C
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
V_SD − Source-to-Drain Voltage (V)
Document Number: 72123
S-50694—Rev. C, 18-Apr-05
0.6
−50 −25 0
25 50 75 100 125 150
T_J − Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.10
0.08
0.06
I_D = 9.1 A
0.04
0.02
0.00
0
2
4
6
8
10
V_GS − Gate-to-Source Voltage (V)
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