SI4434DY Datasheet, PDF (4/5 Pages) Vishay Siliconix – N-Channel 250-V (D-S) MOSFET

Si4434DY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
1.0
60
50
0.5
I_D = 250 mA
40
0.0
30
−0.5
20
−1.0
10
Single Pulse Power
−1.5
−50 −25
0 25 50 75 100 125 150
T_J − Temperature (_C)
0
0.01
0.1
1
10
100
Time (sec)
Safe Operating Area, Junction-to-Case
100
2
1
Duty Cycle = 0.5
10
Limited
by r_DS(on)
1
0.1
0.01
0.001
0.1
T_C = 25_C
Single Pulse
1 ms
10 ms
100 ms
1s
10 s
dc
1
10
100
V_DS − Drain-to-Source Voltage (V)
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
10^−4
Single Pulse
10^−3
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4
10^−2
10^−1
1
Square Wave Pulse Duration (sec)
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 65_C/W
3. T_JM − T_A = P_DMZ_thJA(t)
4. Surface Mounted
10
100
600
Document Number: 72562
S-32556—Rev. B, 15-Dec-03