SI4434DY Datasheet, PDF (1/5 Pages) Vishay Siliconix – N-Channel 250-V (D-S) MOSFET

New Product
N-Channel 250-V (D-S) MOSFET
Si4434DY
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
250
r_DS(on) (W)
0.155 @ V_GS = 10 V
0.162 @ V_GS = 6.0 V
I_D (A)
3.0
2.9
FEATURES
D PWM-OptimizedTrenchFETr Power MOSFET
D 100% R_g Tested
D Avalanche Tested
APPLICATIONS
D Primary Side Switch In:
− Telecom Power Supplies
− Distributed Power Architectures
− Miniature Power Modules
D
S1
S2
S3
G4
SO-8
8D
7D
6D
5D
Top View
Ordering Information: Si4434DY—E3
Si4434DY-T1—E3 (with Tape and Reel)
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)^a
Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
L = 0.1 mH
L = 0.1 mH
T_A = 25_C
T_A = 70_C
V_DS
V_GS
I_D
I_DM
I_S
I_AS
E_AS
P_D
T_J, T_stg
250
"20
3.0
2.1
2.4
1.7
30
2.6
1.3
13
8.4
3.1
1.56
2.0
1.0
−55 to 150
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72562
S-32556—Rev. B, 15-Dec-03
t v 10 sec
Steady State
Steady State
Symbol
R_thJA
R_thJF
Typical
33
65
17
Maximum
40
80
21
Unit
_C/W
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