SI4431BDY Datasheet, PDF (4/6 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET

Si4431BDY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.6
50
0.4
40
I_D = 250 mA
0.2
30
Single Pulse Power
0.0
20
-0.2
10
-0.4
-50 -25
0 25 50 75 100 125 150
T_J - Temperature (_C)
0
10^{- 3}
10^{- 2}
10^{- 1}
1
10
Time (sec)
Safe Operating Area
100
I_DM Limited
r_DS(on) Limited
10
P(t) = 0.0001
1
I_D(on)
Limited
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
0.1
0.01
0.1
T_A = 25_C
Single Pulse
BV_DSS Limited
P(t) = 1
P(t) = 10
dc
1
10
100
V_DS - Drain-to-Source Voltage (V)
100 600
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10^{- 4}
10^{- 3}
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4
10^{- 2}
10^{- 1}
1
Square Wave Pulse Duration (sec)
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 70_C/W
3. T_JM - T_A = P_DMZ_thJA(t)
4. Surface Mounted
10
100
600
Document Number: 72092
S-22437—Rev. A, 20-Jan-03