SI4431BDY Datasheet, PDF (3/6 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET

New Product
Si4431BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.08
0.06
0.04
V_GS = 4.5 V
0.02
V_GS = 10 V
0.00
0
5
10
15
20
25
30
I_D - Drain Current (A)
Gate Charge
10
V_DS = 15 V
I_D = 7.5 A
8
1600
Capacitance
1400
1200
1000
C_iss
800
600
400
C_oss
200
C_rss
0
0
6
12
18
24
30
V_DS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
V_GS = 10 V
I_D = 7.5 A
1.4
6
1.2
4
1.0
2
0.8
0
0
5
10
15
20
25
Q_g - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
30
T_J = 150_C
10
0.6
-50 -25 0 25 50 75 100 125 150
T_J - Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.10
0.08
I_D = 2 A
0.06
I_D = 7.5 A
T_J = 25_C
0.04
0.02
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
V_SD - Source-to-Drain Voltage (V)
Document Number: 72092
S-22437—Rev. A, 20-Jan-03
0.00
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
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