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SI4427DY-T1 Datasheet, PDF (4/5 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET
Si4427DY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.6
Single Pulse Power, Junction-to-Ambient
50
0.4
40
ID = 250 mA
0.2
30
0.0
29
–0.2
10
–0.4
–50 –25
0 25 50 75 100 125 150
TJ – Temperature (_C)
0
10–2
10–1
1
10
Time (sec)
100 600
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
10–4
Single Pulse
10–3
2
1
Duty Cycle = 0.5
10–2
10–1
1
Square Wave Pulse Duration (sec)
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 68_C/W
3. TJM – TA = PDMZthJA(t)
4. Surface Mounted
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Foot
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10–4
10–3
www.vishay.com
4
10–2
10–1
Square Wave Pulse Duration (sec)
1
10
Document Number: 71308
S-51452—Rev. B, 01-Aug-05