SI4427DY-T1 Datasheet, PDF (2/5 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET

Si4427DY
Vishay Siliconix
New Product
SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_SD
V_DS = V_GS, I_D = –250 mA
V_DS = 0 V, V_GS = "12 V
V_DS = –30 V, V_GS = 0 V
V_DS = –30 V, V_GS = 0 V, T_J = 55_C
V_DS v –5 V, V_GS = –10 V
V_GS = –10 V, I_D = –13.3 A
V_GS = –4.5 V, I_D = –12.2 A
V_GS = –2.5 V, I_D = –9.8 A
V_DS = –15 V, I_D = –13.3 A
I_S = –2.5 A, V_GS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
t_rr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
V_DS = –15 V, V_GS = –4.5 V, I_D = –13.3 A
V_DD = –15 V, R_L = 15 W
I_D ^ –1 A, V_GEN = –10 V, R_G = 6 W
I_F = –2.5 A, di/dt = 100 A/ms
Min
Typ
Max Unit
–0.60
–1.7
V
"100
nA
–1
mA
–5
–50
A
0.0086 0.0105
0.0105 0.0125
W
0.0165 0.0195
40
S
–0.8
–1.2
V
47
70
20
nC
8.3
16
25
12
20
220
330
ns
70
110
50
80
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
50
V_GS = 10 thru 3 V
40
30
20
10
2V
0
0
1
2
3
4
5
V_DS – Drain-to-Source Voltage (V)
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2
Transfer Characteristics
50
40
30
20
T_C = 125_C
10
25_C
–55_C
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V_GS – Gate-to-Source Voltage (V)
Document Number: 71308
S-51452—Rev. B, 01-Aug-05