SI4427BDY Datasheet, PDF (4/5 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET

Si4427BDY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.6
Single Pulse Power, Junction-to-Ambient
30
25
0.4
I_D = 250 mA
20
0.2
15
10
0.0
5
- 0.2
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (_C)
0
10 ^{- 2}
10 ^{- 1}
100
r_DS(on) Limited
10
Safe Operating Area
I_DM Limited
P(t) = 0.0001
P(t) = 0.001
1
I_D(on)
Limited
P(t) = 0.01
P(t) = 0.1
0.1
0.01
0.1
T_A = 25_C
Single Pulse
BV_DSS Limited
P(t) = 1
P(t) = 10
dc
1
10
100
V_DS - Drain-to-Source Voltage (V)
1
10
Time (sec)
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
100 600
0.2
0.1
0.1
0.05
0.02
0.01
10 ^{- 4}
Single Pulse
10 ^{- 3}
10 ^{- 2}
10 ^{- 1}
1
Square Wave Pulse Duration (sec)
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 70_C/W
3. T_JM - T_A = P_DMZ_thJA(t)
4. Surface Mounted
10
100
600
www.vishay.com
4
Document Number: 72295
S-31411—Rev. A, 07-Jul-03