SI4427BDY Datasheet, PDF (3/5 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET

New Product
Si4427BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.030
On-Resistance vs. Drain Current
6000
Capacitance
0.025
0.020
0.015
V_GS = 2.5 V
0.010
0.005
V_GS = 4.5 V
V_GS = 10 V
0.000
0
10
20
30
40
50
I_D - Drain Current (A)
Gate Charge
10
V_DS = 15 V
I_D = 12.6 A
8
5000
C_iss
4000
3000
2000
1000
C_rss
C_oss
0
0
6
12
18
24
30
V_DS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
V_GS = 10 V
I_D = 12.6 A
1.4
6
1.2
4
1.0
2
0.8
0
0
20
40
60
80
100
Q_g - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
50
T_J = 150_C
10
T_J = 25_C
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Document Number: 72295
S-31411—Rev. A, 07-Jul-03
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.030
0.025
0.020
I_D = 12.6 A
0.015
0.010
0.005
0.000
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
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