SI4420BDY_06 Datasheet, PDF (4/6 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

Si4420BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C unless noted
0.4
0.2
I_D = 250 µA
0.0
- 0.2
- 0.4
- 0.6
- 0.8
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
50
40
30
T_A = 25 °C
20
10
0
10- ²
10- ¹
1
10
100 600
Time (sec)
Single Pulse Power
2
1
Duty Cycle = 0.5
100
Limited by r_DS(on)
100 µs, 10 µs
10
1 ms
1
10 ms
0.1
0.01
0.1
T_A = 25 °C
Single Pulse
100 ms
1s
10 s
dc, 100 s
1
10
100
V_DS - Drain-to-Source Voltage (V)
Safe Operating Area, Junction-to-Case
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10- ⁴
10- ³
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R _thJA = 70 °C/W
- 3. T _JM T_A = P_DMZ_thJA(t)
4. Surface Mounted
10- ²
10- ¹
1
10
100
600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
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4
Document Number: 73067
S-61013-Rev. B, 12-Jun-06