SI4420BDY_06 Datasheet, PDF (3/6 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

TYPICAL CHARACTERISTICS 25 °C unless noted
0.020
0.016
0.012
0.008
0.004
V_GS = 4.5 V
V_GS = 10 V
0.000
0
10
20
30
40
50
I_D - Drain Current (A)
On-Resistance vs. Drain Current
10
V_DS = 15 V
8
I_D = 13.5 A
6
4
2
0
0
50
5
10
15
20
25
30
Q_g - Total Gate Charge (nC)
Gate Charge
T_J = 150 °C
10
T_J = 25 °C
1
0.00
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
Document Number: 73067
S-61013-Rev. B, 12-Jun-06
Si4420BDY
Vishay Siliconix
3000
2500
C_iss
2000
1500
1000
500
0
0
C_rss
C_oss
5
10
15
20
25
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.6
V_GS = 10 V
1.4
I_D = 13.5 A
1.2
1.0
0.8
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.05
0.04
I_D = 13.5 A
0.03
0.02
0.01
0.00
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
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