SI4178DY-T1-E3 Datasheet, PDF (4/9 Pages) Vishay Siliconix – N-Channel 30 V (D-S) MOSFET

Si4178DY-T1-E3
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
0.050
0.045
T_J = 150 °C
T_J = 25 °C
10
0.040
0.035
0.030
0.025
I_D = 8.4 A; T_J = 25 °C
I_D = 2 A; T_J = 125 °C
I_D = 8.4 A; T_J = 125 °C
0.020
0.015
I_D = 2 A; T_J = 25 °C
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.010
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
3.0
30
2.8
25
2.6
I_D = 250 μA
20
2.4
15
2.2
10
2.0
1.8
5
1.6
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
Limited by R_DS(on)*
0
0.001 0.01 0.1
1
10
100 1000
Time (s)
Single Pulse Power
10
100 μs
1
T_A = 25 °C
Single Pulse
0.1
BVDSS Limited
1 ms
10 ms
100 ms
1s
10 s
DC
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
Document Number: 67906
4
S11-0653-Rev. A, 11-Apr-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000