SI4178DY-T1-E3 Datasheet, PDF (1/9 Pages) Vishay Siliconix – N-Channel 30 V (D-S) MOSFET

Si4178DY-T1-E3
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) ()
0.021 at V_GS = 10 V
30
0.033 at V_GS = 4.5 V
I_D (A)
12^a
6
Q_g (Typ.)
3.7 nC
FEATURES
• TrenchFET^® Power MOSFET
• 100 % R_g and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Notebook System Power
• Low Current DC/DC
SO-8
S1
S2
S3
G4
Top View
8D
7D
6D
5D
Ordering Information: Si4178DY-T1-E3 (Lead (Pb)-free)
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
30
V
V_GS
± 25
T_C = 25 °C
12^a
Continuous Drain Current (T_J = 150 °C)
T_C = 70 °C
T_A = 25 °C
I_D
9.7^a
8.3^{b, c}
Pulsed Drain Current
T_A = 70 °C
6.7^{b, c}
A
I_DM
40
Continuous Source-Drain Diode Current
T_C = 25 °C
T_A = 25 °C
I_S
4.2
2^{b, c}
Single Pulse Avalanche Current
L = 0.1 mH
I_AS
10
Single Pulse Avalanche Energy
E_AS
5
mJ
T_C = 25 °C
5
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
P_D
3.2
2.4^{b, c}
W
T_A = 70 °C
1.5^{b, c}
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, d}
Maximum Junction-to-Foot (Drain)
t  10 s
Steady State
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 85 °C/W.
Symbol
R_thJA
R_thJF
Typical
42
19
Maximum
53
25
Unit
°C/W
Document Number: 67906
www.vishay.com
S11-0653-Rev. A, 11-Apr-11
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000